? 2000 in?eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ?regensburg, germany www.osram-os.com ?+49-941-202-7178 1 february 24, 2000-20 features high current transfer ratio cny17-1, 40 to 80% cny17-2, 63 to 125% cny17-3, 100 to 200% cny17-4, 160 to 320% breakdown voltage, 5300 v rms field-effect stable by trios?ransparent ion shield long term stability industry standard dual-in-line package underwriters lab file #e52744 vde #0884, available with option 1 description the cny17 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode opti- cally coupled to a silicon npn phototransistor. signal information, including a dc level, can be trans- mitted by the device while maintaining a high degree of electrical isolation between input and output. the cny17 can be used to replace relays and trans- formers in many digital interface applications, as well as analog applications such as crt modulation. maximum ratings ( t a =25 c) emitter reverse voltage .............................................6.0 v forward current .......................................... 60 ma surge current (t 10 s)................................. 2.5 a power dissipation......................................100 mw detector collector-emitter breakdown voltage..............70 v emitter-base breakdown voltage ...................7.0 v collector current ......................................... 50 ma collector current (t <1.0 ms)..................... 100 ma power dissipation......................................150 mw package isolation test voltage (between emitter & detector referred to climate din 50014, part 2, nov. 74) (t=1 sec)...................5300 v rms creepage distance ................................. 7.0 mm clearance distance................................. 7.0 mm isolation thickness between emitter and detector............................. 0.4 mm comparative tracking index per din iec 112/ vde0303, part 1 ........................................... 175 isolation resistance v io =500 v, t a =25 c.............................. 10 12 ? v io =500 v, t a =100 c............................ 10 11 ? storage temperature...................?5 c to +150 c operating temperature ...............?5 c to +100 c junction temperature...................................100 c soldering temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm) .........260 c v de characteristics ( t a =25 c) parameter symbol values unit condition emitter forward voltage v f 1.25 ( 1.65) v i f = 60 ma breakdown voltage v br 6.0 i r = 10 ma reverse current i r 0.01 ( 10) a v r = 6.0 v capacitance 25 pf v r =0 v, f=1.0 mhz thermal resistance r thjamb 750 k/w detector capacitance c ce c cb c eb 5.2 6.5 7.5 pf v ce =5.0 v, f=1.0 mhz v cb =5.0 v, f=1.0 mhz v eb =5.0 v, f=1.0 mhz thermal resistance r thjamb 500 k/w package collector-emitter saturation voltage v cesat 0.25 ( 0.4) v i f =10 ma, i c =2.5 ma coupling capacitance c c 0.6 pf .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (1.22) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3 9 .300 .347 (7.62 8.81) 4 typ. 1 2 3 6 5 4 base collector emitter anode cathode nc dimensions in inches (mm) cny17 trios ? phototransistor optocoupler
? 2000 in neon technologies corp. optoelectronics division san jose, ca cny17 www.in neon.com/opto 1-888-in neon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg regensburg, germany www.osram-os.com +49-941-202-7178 2 february 24, 2000-20 current transfer ratio and collector-emitter leakage current by dash number ( t a =25 c) figure 1. linear operation (without saturation) i f =10 ma, v cc =5.0 v, t a =25 c figure 2. switching operation (with saturation) -1 -2 -3 -4 unit i c / i f at v ce =5.0 v ( i f =10 ma) 40-80 63-125 100-200 160-320 % i c / i f at v ce =5.0 v ( i f =1.0 ma) 30 (>13) 45 (>22) 70 (>34) 90 (>56) % collector-emitter leakage current ( v ce =10 v) ( i ceo ) 2.0 ( 50) 2.0 ( 50) 5.0 ( 100) 5.0 ( 100) na load resistance r l 75 w turn-on time t on 3.0 s rise time t r 2.0 s turn-off time t off 2.3 s fall time t f 2.0 s cut-off frequency f co 250 khz -1 ( i f =20 ma) -2 and -3 ( i f =10 ma) -4 ( i f =5.0 ma) turn-on time t on 3.0 4.2 6.0 s rise time t f 2.0 3.0 4.6 s turn-off time t off 18 23 25 s fall time t f 11 14 15 s r l =75 ? v cc =5 v i c 47 ? i f i f 1 k ? v cc =5 v 47 ? figure 3. current transfer ratio versus diode current ( t a = 25 c, v ce =5.0 v) i c / i f =f ( i f ) figure 4. current transfer ratio versus diode current ( t a =0 c, v ce =5.0 v) i c / i f =f ( i f ) figure 5. current transfer ratio versus diode current ( t a =25 c, v ce =5.0 v) i c / i f =f ( i f ) 1 2 3 4 1 2 3 4 1 2 3 4
? 2000 in neon technologies corp. optoelectronics division san jose, ca cny17 www.in neon.com/opto 1-888-in neon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg regensburg, germany www.osram-os.com +49-941-202-7178 3 february 24, 2000-20 figure 6. current transfer ratio versus diode current ( t a =50 c) v ce =5.0 v, i c / i f =f ( i f ) figure 7. current transfer ratio versus diode current ( t a =75 c) v ce =5.0 v figure 8. current transfer ratio versus temperature ( i f =10 ma, v ce =5.0 v) i c / i f =f (t) 1 2 3 4 1 2 3 4 4 3 2 1 figure 9. transistor characteristics (b=550) cny17-3, -4 i c =f( v ce ) ( t a =25 c, i f =0) figure 10. output characteristics cny17-3, -4 ( t a =25 c) i c =f( v ce ) figure 11. forward voltage v f =f ( i f ) figure 12. collector emitter off-state current i ceo =f (v, t) ( t a =25 c, i f =0) figure 13. saturation voltage versus collector current and modulation depth cny17-1 v ce sat =f ( i c ) ( t a =25 c) figure 14. saturation voltage versus collector current and modulation depth cny17-2 v ce sat =f ( i c ) ( t a =25 c)
? 2000 in neon technologies corp. optoelectronics division san jose, ca cny17 www.in neon.com/opto 1-888-in neon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg regensburg, germany www.osram-os.com +49-941-202-7178 4 february 24, 2000-20 figure 15. saturation voltage versus collector current and modulation depth cny17-3 v ce sat =f ( i c ) ( t a =25 c) figure 16. saturation voltage versus collector current and modulation depth cny17-4 v ce sat =f ( i c ) ( t a =25 c) figure 17. permissible pulse load d=parameter, t a =25 c, i f =f ( t p ) figure 18. permissible power dissipation transistor and diode p tot =f ( t a ) figure 19. permissible forward current p tot =f ( t a )
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